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The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

Authors
Jeon, Hee ChangLi, MingkaiLee, Seung JooIhm, GukhyungKang, Tae WonChizhik, S. A.
Issue Date
Sep-2015
Publisher
ELSEVIER
Keywords
Diluted magnetic semiconductor; Quantum well; Specific heat; GaMnAs; Phase transition
Citation
CURRENT APPLIED PHYSICS, v.15, pp S26 - S29
Indexed
SCI
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
15
Start Page
S26
End Page
S29
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/25443
DOI
10.1016/j.cap.2015.04.013
ISSN
1567-1739
1878-1675
Abstract
The phase transition and specific heat of carrier-induced diluted magnetic semiconductors (DMS) (Ga,Mn)As quantum well are investigated theoretically. With different concentration of magnetic ion and hole gas, there are three types of phase transitions, first-order, second-order and mixed first and second order. The specific heat of these three types of phase transitions are different, especially for the mixed-order phase transition, which shows two-step transition. The results indicate that the specific heat of DMS is a good tool to study the phase transition and critical phenomena of those quantum wells. (C) 2015 Elsevier B.V. All rights reserved.
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