The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells
- Authors
- Jeon, Hee Chang; Li, Mingkai; Lee, Seung Joo; Ihm, Gukhyung; Kang, Tae Won; Chizhik, S. A.
- Issue Date
- Sep-2015
- Publisher
- ELSEVIER
- Keywords
- Diluted magnetic semiconductor; Quantum well; Specific heat; GaMnAs; Phase transition
- Citation
- CURRENT APPLIED PHYSICS, v.15, pp S26 - S29
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Start Page
- S26
- End Page
- S29
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/25443
- DOI
- 10.1016/j.cap.2015.04.013
- ISSN
- 1567-1739
1878-1675
- Abstract
- The phase transition and specific heat of carrier-induced diluted magnetic semiconductors (DMS) (Ga,Mn)As quantum well are investigated theoretically. With different concentration of magnetic ion and hole gas, there are three types of phase transitions, first-order, second-order and mixed first and second order. The specific heat of these three types of phase transitions are different, especially for the mixed-order phase transition, which shows two-step transition. The results indicate that the specific heat of DMS is a good tool to study the phase transition and critical phenomena of those quantum wells. (C) 2015 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > ETC > 1. Journal Articles

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