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Interfacial energy level alignments between low-band-gap polymer PTB7 and indium zinc oxide anode
- Authors
- Shin, Dongguen; Lee, Jeihyun; Park, Soohyung; Jeong, Junkyeong; Seo, Ki-Won; Kim, Hyo-Joong; Kim, Han-Ki; Choi, Min-Jun; Chung, Kwun-Bum; Yi, Yeonjin
- Issue Date
- Sep-2015
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.8, no.9
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 8
- Number
- 9
- ISSN
- 1882-0778
1882-0786
- Abstract
- The interfacial energy level alignments between poly(thieno[3,4-b]-thiophene)-co-benzodithiophene (PTB7) and indium zinc oxide (IZO) were investigated. In situ ultraviolet photoemission spectroscopy measurements were conducted with the step-by-step deposition of PTB7 on IZO substrate. All spectral changes were analyzed between each deposition step, and interfacial energy level alignments were estimated. The hole barrier of standard ultraviolet-ozone treated IZO is 0.58 eV, which is lower than the value of 1.09 eV obtained for bare IZO. The effect of barrier reduction on the hole transport was also confirmed with electrical measurements of hole-dominated devices. (C) 2015 The Japan Society of Applied Physics
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)