Electrical Characterization and Thermal Admittance Spectroscopy Analysis of InGaN/GaN MQW Blue LED Structure

Abstract

Characterizations of InGaN/GaN-quantum wells based LED heterostructure were undertaken by static and dynamic electrical measurements at different temperatures. The analysis of the current-voltage (I-V) characteristics demonstrated different mechanisms involved in the current charge transport in the LED device. Experimental admittance spectra have been investigated in broad frequency range, at various temperature and different direct current biases. A specific extraction of the quantum well conductance, based on Nicollian and Goetzberger's model related to interface state conductance in Metal-Insulator-Semiconductor structure, has shown the effect of the quantum structure on the electric transport, and hence a correlation between the I-V electrical characteristics and the admittance spectroscopy has revealed the different conduction mechanisms involved in the charge transport in the InGaN/GaN LED. Activation energies and carrier capture velocity obtained from Arrhenius plots, determined from the thermally activated quantum well conductance peaks which are revealed with the used model, have confirmed that quantum well parameters are related to the carrier emission from confined levels in quantum wells.