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Cited 6 time in webofscience Cited 7 time in scopus
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Chemical bath deposited MgxZn1-xS(O) thin films and their photoluminescence properties

Authors
Inamdar, Akbar I.Han, JaeseokJo, YongcheolKim, JongminPawar, S. M.Yuldashev, Shavkat U.Kim, HyungsangIm, Hyunsik
Issue Date
Dec-2015
Publisher
ELSEVIER SCIENCE BV
Keywords
Photoluminescence; Mg-doped Zinc sulfide; Structural; Morphological; Optical properties
Citation
JOURNAL OF LUMINESCENCE, v.168, pp 98 - 101
Pages
4
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF LUMINESCENCE
Volume
168
Start Page
98
End Page
101
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/25295
DOI
10.1016/j.jlumin.2015.07.043
ISSN
0022-2313
1872-7883
Abstract
A zinc sulfide (ZnS) specimen was intentionally doped with transition metal (Mg-donor) elements using a chemical bath deposition (CBD) technique. Both the un-doped and the magnesium (Mg)-doped ZnS samples were confirmed to have hexagonal wurtzite ZnS crystal structure. The XRD patterns showed no characteristic peak for Mg indicating that the Mg2+ ions had been incorporated into ZnS(O ) lattice sites. In contrast to un-doped samples, Mg doping resulted in changes in the morphological features of the spherical clusters which resulted in porous, spongy vermicular structures. The energy band gap of the MgxZn1-xS(0) film was slightly larger than that for the ZnS(O) film. A photoluminescence study revealed that the emissions were near violet-blue-green in color. The emission characteristics consist of two components; emission in the near violet and in visible region. That is the first is between 4160 and 4400 angstrom and the second is at 5190 angstrom, and these are associated with the donor-acceptor transitions with sulfur vacancies as acceptors and the magnesium related defects (trap states) in the samples respectively. (C) 2015 Elsevier B.V. All rights reserved.
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College of Natural Science > Department of Physics > 1. Journal Articles
College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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