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Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells
- Issue Date
- Mar-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Atomic force microscopy (AFM); resistive switching (RS); SCLC; ZrN
- Citation
- IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.1, pp 252 - 257
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Volume
- 13
- Number
- 1
- Start Page
- 252
- End Page
- 257
- ISSN
- 1530-4388
1558-2574
- Abstract
- This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10(4). The device also showed an endurance of > 10(9) cycles and a retention time of > 10(4) s at 85 degrees C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device.
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