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Highly luminescent InP/GaP/ZnS QDs emitting in the entire color range via a heating up processopen access

Authors
Park, Joong PillLee, Jae-JoonKim, Sang-Wook
Issue Date
20-Jul-2016
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.6
Indexed
SCI
SCIE
SCOPUS
Journal Title
SCIENTIFIC REPORTS
Volume
6
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/24941
DOI
10.1038/srep30094
ISSN
2045-2322
Abstract
InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization efforts successfully. Herein, we introduce a simple synthetic method for InP/GaP/ZnS core/shell/shell QDs via a heating process. The reaction was completed within 0.5 h and a full color range from blue to red was achieved. For emitting blue color, t-DDT was applied to prevent particle growth. From green to orange, color variation was achieved by adjusting the quantity of myristic acid. Utilizing large quantities of gallium chloride led to red color. With this method, we produced high-quality InP/GaP/ ZnS QDs (blue QY: similar to 40%, FWHM: 50 nm; greenQY:similar to 85%, FWHM: 41 nm; red QY: similar to 60%, FWHM: 65 nm). We utilized t-DDT as a new sulfur source. Compared with n-DDT, t-DDT was more reactive, which allowed for the formation of a thicker shell.
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College of Engineering (Department of Energy and Materials Engineering)
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