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Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Deviceopen access
- Issue Date
- May-2017
- Publisher
- KOREAN VACUUM SOC
- Keywords
- Coulomb interaction induced gap; Phosphorus doped silicon; Tunnelling device
- Citation
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v.26, no.3, pp 50 - 51
- Pages
- 2
- Indexed
- ESCI
KCI
- Journal Title
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY
- Volume
- 26
- Number
- 3
- Start Page
- 50
- End Page
- 51
- ISSN
- 1225-8822
2288-6559
- Abstract
- Strongly correlated electron systems which induce strong electron-electron interaction at ultra-low temperatures have always been an intriguing topic in mesoscopic condensed matter physics. Below 130 mK, a peculiar gap can be found in Al/SiO2/Si:P structured tunnelling devices. The gap survives at the base temperature of more than 1800 gauss (30 mK), contrary to the superconductivity of the top Al electrode, which is completely suppressed above 100 gauss. This outcome implies that the observed gap is induced by Coulomb interaction in the heavily doped Si.
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Related Researcher
- Cho, Sang Eun
- College of Advanced Convergence Engineering (Division of System Semiconductor)