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Bipolar resistive switching of solution processed TiO2-graphene oxide nanocomposite for nonvolatile memory applications
- Issue Date
- 8-Nov-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Thin films; TiO2-GO nanocomposite; Resistive Switching; Spin coating; Electrical properties
- Citation
- PHYSICS LETTERS A, v.377, no.37, pp 2432 - 2435
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- PHYSICS LETTERS A
- Volume
- 377
- Number
- 37
- Start Page
- 2432
- End Page
- 2435
- ISSN
- 0375-9601
1873-2429
- Abstract
- In this study, we report the observation of memory effect in TiO2-GO nanocomposite films. Electrical properties of the prepared Al/TiO2-GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO2-GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO2 matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 10(5) cycles and long retention time more than 5 x 10(3) s. (c) 2013 Elsevier B.V. All rights reserved.
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Related Researcher
- Kathalingam, Adaikalam
- College of Engineering