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Formation of Recombination Zone in Blue Phosphorescent Organic Light-Emitting Diodes with Different Electron Transport Layers and Its Effects on Device Performance

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dc.contributor.authorRhee, Sang Ho-
dc.contributor.authorLee, Yong-Min-
dc.contributor.authorKim, Ki Won-
dc.contributor.authorKim, Chang Su-
dc.contributor.authorSong, Myungkwan-
dc.contributor.authorChung, Kwun-Bum-
dc.contributor.authorKim, Sung Hyun-
dc.contributor.authorRyu, Seung Yoon-
dc.date.accessioned2024-09-26T09:03:13Z-
dc.date.available2024-09-26T09:03:13Z-
dc.date.issued2014-
dc.identifier.issn2162-8769-
dc.identifier.issn2162-8777-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/23950-
dc.description.abstractThe effects of the electron mobilities and energy levels of different electron transport layer (ETL) materials on the performances were systemically investigated in blue phosphorescent organic light-emitting diodes. The spatial control of recombination zone (RZ) which was accompanied with triplet exciton quenching affected the balance between holes and electrons in the emission layer, resulting in the variations of the device performances. An optical micro-cavity effect in the electroluminescence (EL) spectrum around 500 nm was noticed by employing tris(8-hydroxyquinolinolato)aluminum (Alq(3)) ETL. This was attributed to the broadening of the emission zone through the emission layer over the ETL, exhibiting the greenish color coordinates. The current efficiency of the device with 3-phenyl-4(10-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) ETL was much higher than that of the same structured device with any other ETL due to better charge balance as Well as the suppression of triplet exciton quenching by the narrow RZ with low electron mobility and proper band alignment. (C) 2014 The Electrochemical Society. All rights reserved.-
dc.language영어-
dc.language.isoENG-
dc.publisherELECTROCHEMICAL SOC INC-
dc.titleFormation of Recombination Zone in Blue Phosphorescent Organic Light-Emitting Diodes with Different Electron Transport Layers and Its Effects on Device Performance-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1149/2.0161408jss-
dc.identifier.scopusid2-s2.0-84990975389-
dc.identifier.wosid000339985000017-
dc.identifier.bibliographicCitationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.3, no.8, pp R164 - R167-
dc.citation.titleECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.citation.volume3-
dc.citation.number8-
dc.citation.startPageR164-
dc.citation.endPageR167-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusDERIVATIVES-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordPlusANODE-
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