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Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching
- Authors
- Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Im, Hyun Sik; Hong, Jin Pyo
- Issue Date
- Mar-2014
- Publisher
- ELSEVIER
- Keywords
- XPS; Resistive switching; Non-lattice oxygen; ReRAM
- Citation
- CURRENT APPLIED PHYSICS, v.14, no.3, pp 355 - 358
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Number
- 3
- Start Page
- 355
- End Page
- 358
- ISSN
- 1567-1739
1878-1675
- Abstract
- We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed. (C) 2013 Elsevier B. V. All rights reserved.
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Collections - College of Advanced Convergence Engineering > ETC > 1. Journal Articles
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