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Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

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dc.contributor.authorBae, Yoon Cheol-
dc.contributor.authorLee, Ah Rahm-
dc.contributor.authorBaek, Gwang Ho-
dc.contributor.authorChung, Je Bock-
dc.contributor.authorKim, Tae Yoon-
dc.contributor.authorIm, Hyun Sik-
dc.contributor.authorHong, Jin Pyo-
dc.date.accessioned2024-09-26T09:03:10Z-
dc.date.available2024-09-26T09:03:10Z-
dc.date.issued2014-03-
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/23932-
dc.description.abstractWe present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed. (C) 2013 Elsevier B. V. All rights reserved.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER-
dc.titleInfluence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/j.cap.2013.11.029-
dc.identifier.scopusid2-s2.0-84892158613-
dc.identifier.wosid000331640600025-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.14, no.3, pp 355 - 358-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume14-
dc.citation.number3-
dc.citation.startPage355-
dc.citation.endPage358-
dc.type.docTypeArticle-
dc.identifier.kciidART001867959-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorXPS-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorNon-lattice oxygen-
dc.subject.keywordAuthorReRAM-
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