Improvement of device performance and instability of tungsten-doped InZnO thin-film transistor with respect to doping concentration

Abstract

W-doped InZnO (WIZO) thin-film transistors (TFTs) were fabricated by co-sputtering with different W doping concentrations. We varied the W doping concentration to change the device performance and stability of the WIZO TFTs. WIZO TFTs with a W doping concentration of similar to 1.1% showed the lowest threshold voltage shift and hysteresis. We correlated the device characteristics with the evolution of the electronic structure, such as band alignment, chemical bonding states, and band edge states. As the W doping concentration increased, the oxygen-deficient bonding states and W suboxidation states decreased, while the conduction-band offset and the incorporation of the WOx electronic structure into the conduction band increased. (C) 2016 The Japan Society of Applied Physics