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Electronic and optical properties of ZnOS/ZnO quantum-well structures with polarization effects
- Authors
- Jeon, H. C.; Kumar, Sunil; Lee, S. J.; Kang, T. W.; Park, S. H.
- Issue Date
- Aug-2016
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Quantum well; Internal field; Optical gain
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.69, no.3, pp 370 - 372
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 69
- Number
- 3
- Start Page
- 370
- End Page
- 372
- ISSN
- 0374-4884
1976-8524
- Abstract
- The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.
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Related Researcher
- Jeon, Hee Chang
- College of Engineering