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Studies on copper oxide thin films prepared by simple nebulizer spray technique

Authors
Prabu, R. DavidValanarasu, S.Kulandaisamy, I.Ganesh, V.Shkir, MohdKathalingam, A.
Issue Date
May-2017
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.28, no.9, pp 6754 - 6762
Pages
9
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume
28
Number
9
Start Page
6754
End Page
6762
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/23775
DOI
10.1007/s10854-017-6371-2
ISSN
0957-4522
1573-482X
Abstract
Copper oxide films were deposited by simple nebulizer spray pyrolysis technique using aqueous solution of Copper(II) acetate monohydrate, high pure glucose and 20 vol% of 2-propanol. Structural, morphological, optical and electrical properties of the deposited films were characterized by XRD, Laser Raman, AFM, UV-Vis and Hall Effect measurements. The XRD study confirmed that the copper oxide films are in polycrystalline form of cuprous oxide (Cu2O) phase with cubic crystal structure for the films deposited using precursor volumes of 3 and 4 ml, whereas the films deposited using 5 ml precursor solution are in cupric oxide (CuO) phase with monoclinic crystal structure. The higher concentration films shows higher thickness (similar to 600 nm for 5 ml) and that change the phase/composition of the films. The prepared CuO films with 5 ml precursor solution are expected to show better properties. AFM studies revealed that the surfaces of the films are very smooth with uniformly distributed grains. The surface roughness of the film was increased with volume of the solution and the grain islands were coalesced with each other. UV visible spectrophotometer measurements showed that the band gap value of the prepared copper oxide thin films is varied between 1.63 and 1.23 eV due to change of volume of the solution. Hall Effect measurement showed that the prepared films are in p-type conductivity with 8.21 x10(2) Omega-cm resistivity (rho) and 12.56 x10(15) cm(-3) carrier concentration (n) for the films prepared at 5 ml solution. All the studied properties of CuO for 5 ml precursor solution are remarkably changed.
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