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Effects of oxide electron transport layer on quantum dots light emitting diode with an organic/inorganic hybrid structure
- Authors
- Kim, Jiwan; Park, Yu Jin; Kim, Yohan; Kim, Yong-Hoon; Han, Chul Jong; Han, Jeong In; Oh, Min Suk
- Issue Date
- Nov-2013
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- zinc tin oxide; quantum dots; light emitting diode; hybrid structure
- Citation
- ELECTRONIC MATERIALS LETTERS, v.9, no.6, pp 779 - 782
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
KCICANDI
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 9
- Number
- 6
- Start Page
- 779
- End Page
- 782
- ISSN
- 1738-8090
2093-6788
- Abstract
- We report on the effects of an oxide semiconductor as an electron transport layer (ETL) on a quantum dots light emitting diode (QD-LED). To improve the properties of QD-LED, we optimized the process parameters for the deposition and post-annealing steps of an oxide ETL. When zinc tin oxide (ZTO) was deposited by radio-frequency magnetron sputtering in a gas mixture of argon and oxygen (Ar : O-2 = 2 : 1) and then annealed under 760 Torr O-2 for 10 min, our QD-LED showed improved luminescence characteristics. Additionally, to overcome the problem of non-uniform luminescence, we optimized the concentration and process conditions of colloidal quantum dot materials. Finally, we fabricated QD-LED devices with luminescence of 4,874 cd/m(2) and luminous efficiency of 2.68 cd/A.
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