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High Speed Switching in Quantum Dot/Ti-TiOx Nonvolatile Memory Device
- Authors
- Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang
- Issue Date
- Mar-2016
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- quantum dot; nanoparticles; tunnelings
- Citation
- ELECTRONIC MATERIALS LETTERS, v.12, no.2, pp 323 - 327
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 12
- Number
- 2
- Start Page
- 323
- End Page
- 327
- ISSN
- 1738-8090
2093-6788
- Abstract
- We report a Ti-TiOx/CdSe-ZnS core-shell quantum dot based bipolar nonvolatile resistive memory device. The device exhibits an ON/OFF ratio of 100 and is reproducible. The memory device showed good retention characteristics under stress and excellent stability even after 100,000 cycles of switching operation. The switching speed measured was around 15 ns. The devices are solution processed at room temperature in ambient atmosphere. The operating mechanism is discussed based on charge trapping in quantum dots resulting in the Coulomb blockade effect with a ZnS shell layer and metal-oxide layer acting as the barrier to confine the trapped charges. The proposed mechanism is validated by a three terminal device designed exclusively for this purpose.
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Related Researcher
- Park, Hyun Chang
- College of Engineering (Department of Electronics and Electrical Engineering)