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Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition
- Authors
- Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang
- Issue Date
- 11-Nov-2016
- Publisher
- ELSEVIER
- Keywords
- Thin films; Physical vapor deposition; Nanoparticles; Semiconductors; Electron microscopy
- Citation
- PHYSICS LETTERS A, v.380, no.44, pp 3743 - 3747
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- PHYSICS LETTERS A
- Volume
- 380
- Number
- 44
- Start Page
- 3743
- End Page
- 3747
- ISSN
- 0375-9601
1873-2429
- Abstract
- In this paper we report In2O3/CdSe quantum dot based non-volatile resistive memory device with ON/OFF ratio similar to 1000. Indium nanostructures were grown by oblique angle deposition technique in a thermal evaporator. Indium oxide nanostructures had size ranging from 20 nm to 100 nm as observed from TEM and AFM methods. The facile device fabricated with a layer of CdSe quantum dot on indium oxide film exhibited excellent endurance characteristics over 100,000 switching cycles. Retention tests showed good stability for over 4000 s. Memory operating mechanism is proposed based on charge trapping/de-trapping in quantum dots with indium oxide acting as barrier leading to Coulomb blockade. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state. (C) 2016 Elsevier B.V. All rights reserved.
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Related Researcher
- Kim, Hyun Seok
- College of Engineering (Department of Electronics and Electrical Engineering)