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Annealing induced p-type conversion and substrate dependent effect of n-ZnO/p-Si heterostructure
- Authors
- Kathalingam, A.; Kim, Hyun-Seok
- Issue Date
- 1-Jun-2017
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ZnO nanorods; n-ZnO/p-Si heterojunction; Substrate variation; p-Type doping; Thermal treatment
- Citation
- MATERIALS LETTERS, v.196, pp 30 - 32
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- MATERIALS LETTERS
- Volume
- 196
- Start Page
- 30
- End Page
- 32
- ISSN
- 0167-577X
1873-4979
- Abstract
- This paper reports the conductivity type conversion of ZnO nanorod thin film by annealing. The n-type conductivity of hydrothermally prepared ZnO nanorods was changed to p-type ZnO through thermal treatment in air ambient without doping process. The ZnO nanorod films were grown on p-Si (111) and p(+)-Si (100) substrates by hydrothermal method. SEM and XRD measurements showed the excellent crystalline quality and uniform morphology of the grown ZnO nanorod films. Furthermore, substrate and annealing temperature-dependent I-V responses of the films were also studied. A Schottky diode type behavior was shown by ZnO NRs grown on low resistive p-type silicon with a reasonable photoconversion efficiency. (C) 2017 Elsevier B. V. All rights reserved.
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Related Researcher
- Kathalingam, Adaikalam
- College of Engineering