On-receptor computing with classical associative learning in semiconductor oxide memristors
- Authors
- Ju, Dongyeol; Lee, Jungwoo; Kim, Sungjun
- Issue Date
- Aug-2024
- Publisher
- Royal Society of Chemistry
- Keywords
- Gallium; Indium; Oxide; Zinc Oxide; Cost Effectiveness; Data Handling; Energy Efficiency; Gallium Compounds; Ii-vi Semiconductors; Semiconducting Indium Compounds; Zinc Oxide; Associative Learning; Cerebral Functions; Cost Effective; Energy Efficient; Memristor; Neumann Architecture; Neuromorphic Computing; Nociceptor; Parallel Data Processing; Semiconductor Oxides; Memristors; Gallium; Indium; Oxide; Zinc Oxide; Article; Artificial Intelligence; Associative Learning; Brain Function; Computer Simulation; Data Processing; Learning; Memristor; Nerve Cell Plasticity; Pain Receptor; Semiconductor; Sensitization; Sensory Nerve Cell; Short Term Memory; Synapse
- Citation
- Nanoscale, v.16, no.32, pp 15330 - 15342
- Pages
- 13
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanoscale
- Volume
- 16
- Number
- 32
- Start Page
- 15330
- End Page
- 15342
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/22870
- DOI
- 10.1039/d4nr02132k
- ISSN
- 2040-3364
2040-3372
- Abstract
- The increasing demand for energy-efficient data processing leads to a growing interest in neuromorphic computing that aims to emulate cerebral functions. This approach offers cost-effective and rapid parallel data processing, surpassing the limitations of the conventional von Neumann architecture. Key to this emulation is the development of memristors that mimic biological synapses. Recently, research efforts have focused on the incorporation of nociceptors-sensory neurons capable of detecting external stimuli-into memristors for applications in robotics and artificial intelligence. This integration enables memristors to adapt to various circumstances while remaining cost-effective. A nonfilamentary gradual resistive switching memristor is utilized to implement artificial nociceptor and synaptic behaviors. The fabricated Pt/indium gallium zinc oxide (IGZO)/SnOx/TiN device exhibits essential properties of biological nociceptors, including threshold response, no-adaptation, relaxation, sensitization, and recovery. Furthermore, the device leverages short-term memory principles to emulate learning behaviors observed in the brain by showcasing "forgetting" paradigms. Additionally, control of the input spikes yields different synaptic plasticity responses, thus emulating the key functions of our synapse. Computational simulations demonstrate the device's ability to perform both computing and sensing tasks effectively, thus enabling on-receptor computing with associative learning capabilities. The exploration of on-receptor computing in Pt/IGZO/SnOx/TiN memristors integrated both synaptic and nociceptor functionalities, with Pavlovian conditioning examined, paving the way for various future applications.
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Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles

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