Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Abstract

The two-terminal memristor is a promising neuromorphic artificial electronic device, mirroring biological synapses in structure and replicating various synaptic functions. Despite its advantages, challenges in achieving high reliability, gradual switching, and low energy consumption hinder progress in neuromorphic devices. This study explores electronic synapses and simulates analog switching in a Pt/TiN/ZnO/SnO2/ZnO/Pt multilayer (ML) configuration, featuring a 3 nm SnO2 layer between ZnO layers. Results show enhanced cycling endurance (more than 250 cycles), resistance window (102), tunable synaptic plasticity, and multilevel switching. ML memristors exhibit low coefficient of variation (4.5 %) in set voltage, low energy consumption (set = 0.12 nj, reset = 0.1 nj), and fast switching speeds (set = 300 ns, reset = 200 ns), suitable for high-density memory and neuromorphic systems. They successfully emulate synaptic functions, including paired-pulse facilitation (PPF), spike voltage-dependent plasticity (SVDP), spike width-dependent plasticity (SWDP), spike frequency-dependent plasticity (SFDP), and post-tetanic potentiation (PTP). Modulating pulse amplitude and width achieves multilevel conductance in long-term potentiation (LTP) and long-term depression (LTD). Using nonlinear conductance data, a 96.5 % image pattern recognition accuracy is achieved in a deconvolution neural network (DNN) simulation. These results highlight the ML memristor's potential in efficient neuromorphic computing systems.