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Cationic-Surfactant (CTAB) Assisted Preparation of 2D Graphitic Carbon Nitride (g-C3N4) Sheets Advances Supercapacitive Performanceopen access

Authors
Mane, Sagar M.Teli, Aviraj M.Beknalkar, Sonali A.Patil, Deepak R.Shin, Jae CheolLee, Jaewoong
Issue Date
Apr-2024
Publisher
Multidisciplinary Digital Publishing Institute (MDPI)
Keywords
2D g-C<sub>3</sub>N<sub>4</sub>; CTAB integration; current mechanism; specific capacitance
Citation
Crystals, v.14, no.4, pp 1 - 16
Pages
16
Indexed
SCIE
SCOPUS
Journal Title
Crystals
Volume
14
Number
4
Start Page
1
End Page
16
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/21949
DOI
10.3390/cryst14040312
ISSN
2073-4352
2073-4352
Abstract
The distinct physicochemical characteristics of metal-free graphitic carbon nitride (g-C3N4) are gaining interest in various fields, including energy storage and conversion. However, the electrochemical performance of this material is constrained, owing to its minimal surface area. Incorporating a surfactant is one of the ways to resolve the issue of surface area and therefore improve the electrochemical performance of g-C3N4. This research delves into a method aimed at improving the supercapacitive capabilities of 2D g-C3N4 sheets through the implementation of a cationic surfactant, cetyltrimethylammonium bromide (CTAB). Electrochemical studies reveal that the CTAB-assisted g-C3N4 sheets exhibit remarkable improvements in specific capacitance, cyclic stability, and comparative rate capability in relation to pristine g-C3N4. The specific capacitance of g-C3N4 with CTAB exceeds about 28%, which gives 162. 8 F g−1. This value is 117.7 F g−1 for electrode material without CTAB at 0.5 mA cm−2. This improved electrochemical performance can be credited to the heightened surface area, improved electronic conductivity, and optimized charge transfer kinetics facilitated by the CTAB surfactant. We aim to emphasize the enhancement of the overall performance of g-C3N4-based supercapacitors for advanced energy storage systems. © 2024 by the authors.
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