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Cited 23 time in webofscience Cited 28 time in scopus
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High interfacial charge separation in visible-light active Z- scheme g-C3N4/MoS2 heterojunction: Mechanism and degradation of sulfasalazineopen access

Authors
Sharma, GauravNaushad, Mu.ALOthman, Zeid A.Iqbal, JibranBathula, Chinna
Issue Date
Dec-2022
Publisher
Elsevier Ltd.
Keywords
Wastewater treatment; 2D; Binary heterojunction; G-C3N4; Sulfasalazine; Photodegradation
Citation
Chemosphere, v.308, pp 1 - 12
Pages
12
Indexed
SCIE
SCOPUS
Journal Title
Chemosphere
Volume
308
Start Page
1
End Page
12
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/2172
DOI
10.1016/j.chemosphere.2022.136162
ISSN
0045-6535
1879-1298
Abstract
Examination of highly proficient photoactive materials for the degradation of antibiotics from the aqueous solution is the need of the hour. In the present study, a 2D/2D binary junction GCM, formed between graphitic-carbon nitride (g-C3N4) and molybdenum disulphide (MoS2), was synthesized using facile hydrothermal method and its photo -efficacy was tested for the degradation of sulfasalazine (SUL) from aqueous solution under visible-light irradia-tion. Morphological analysis indicated the nanosheets arrangement of MoS2 and g-C3N4. The visible-light driven experiments indicated that 97% antibiotic was degraded by GCM-30% within 90 min which was found to be quite high than pristine g-C3N4 and MoS2 at solution pH of 6, GCM-30% dose of 20 mg, and SUL concentration of 20 mgL-1. The degradation performance of GCM-30% was selectively improved due to enhanced visible-light ab-sorption, high charge carrier separation, and high redox ability of the photogenerated charges which was induced by the effective Z-scheme 2D/2D heterojunction formed between g-C3N4 and MoS2. The reactive radicals as determined by the scavenging study were .O-2(-), and h+. A detailed degradation mechanism of SUL by GCM-30% was also predicted based on the detailed examination of the band gaps of g-C3N4 and MoS2.
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Devasahayam, Bathula Chinna
College of Engineering (Department of Electronics and Electrical Engineering)
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