High interfacial charge separation in visible-light active Z- scheme g-C3N4/MoS2 heterojunction: Mechanism and degradation of sulfasalazineopen access
- Authors
- Sharma, Gaurav; Naushad, Mu.; ALOthman, Zeid A.; Iqbal, Jibran; Bathula, Chinna
- Issue Date
- Dec-2022
- Publisher
- Elsevier Ltd.
- Keywords
- Wastewater treatment; 2D; Binary heterojunction; G-C3N4; Sulfasalazine; Photodegradation
- Citation
- Chemosphere, v.308, pp 1 - 12
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- Chemosphere
- Volume
- 308
- Start Page
- 1
- End Page
- 12
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/2172
- DOI
- 10.1016/j.chemosphere.2022.136162
- ISSN
- 0045-6535
1879-1298
- Abstract
- Examination of highly proficient photoactive materials for the degradation of antibiotics from the aqueous solution is the need of the hour. In the present study, a 2D/2D binary junction GCM, formed between graphitic-carbon nitride (g-C3N4) and molybdenum disulphide (MoS2), was synthesized using facile hydrothermal method and its photo -efficacy was tested for the degradation of sulfasalazine (SUL) from aqueous solution under visible-light irradia-tion. Morphological analysis indicated the nanosheets arrangement of MoS2 and g-C3N4. The visible-light driven experiments indicated that 97% antibiotic was degraded by GCM-30% within 90 min which was found to be quite high than pristine g-C3N4 and MoS2 at solution pH of 6, GCM-30% dose of 20 mg, and SUL concentration of 20 mgL-1. The degradation performance of GCM-30% was selectively improved due to enhanced visible-light ab-sorption, high charge carrier separation, and high redox ability of the photogenerated charges which was induced by the effective Z-scheme 2D/2D heterojunction formed between g-C3N4 and MoS2. The reactive radicals as determined by the scavenging study were .O-2(-), and h+. A detailed degradation mechanism of SUL by GCM-30% was also predicted based on the detailed examination of the band gaps of g-C3N4 and MoS2.
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Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles

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