Cited 11 time in
A 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Van-Son Trinh | - |
| dc.contributor.author | Song, Jeong-Moon | - |
| dc.contributor.author | Park, Jung-Dong | - |
| dc.date.accessioned | 2024-08-08T11:00:46Z | - |
| dc.date.available | 2024-08-08T11:00:46Z | - |
| dc.date.issued | 2023-04 | - |
| dc.identifier.issn | 2771-957X | - |
| dc.identifier.issn | 2771-9588 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/21540 | - |
| dc.description.abstract | We report a 280-GHz mixer-first quadrature receiver in 130-nm SiGe that achieves a peak gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise figure (NF) of 18.2 dB. The receiver is comprised of two Gilbert-cell mixers with swapped RF and local oscillation (LO) ports that downconvert the RF signal at 260-299 GHz to I/Q IF signals at 1-40 GHz by using a pseudo-differential LO driver at 259 GHz. In each channel, a wideband IF amplifier was used for an aimed conversion gain of higher than 20 dB. Combined with a differentia hybrid coupler, an integrated 259-GHz driving amplifier (DA) was integrated to generate the quadrature LO signals for I and Q channels. The measured amplitude and phase imbalance between the I and Q channels are around 4 dB and 4 degrees, respectively. The fabricated chip occupies a whole area of 1.12 mm(2) and consumes a dc power of 384 mW. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | A 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LMWT.2022.3228646 | - |
| dc.identifier.scopusid | 2-s2.0-85174871367 | - |
| dc.identifier.wosid | 000934647600001 | - |
| dc.identifier.bibliographicCitation | IEEE Microwave and Wireless Technology Letters, v.33, no.4, pp 435 - 438 | - |
| dc.citation.title | IEEE Microwave and Wireless Technology Letters | - |
| dc.citation.volume | 33 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 435 | - |
| dc.citation.endPage | 438 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | TRANSMITTER | - |
| dc.subject.keywordPlus | BICMOS | - |
| dc.subject.keywordPlus | SYSTEMS | - |
| dc.subject.keywordPlus | POWER | - |
| dc.subject.keywordAuthor | IQ receiver | - |
| dc.subject.keywordAuthor | SiGe | - |
| dc.subject.keywordAuthor | sub-terahertz (THz) amplifier | - |
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