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Cited 10 time in webofscience Cited 11 time in scopus
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A 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process

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dc.contributor.authorVan-Son Trinh-
dc.contributor.authorSong, Jeong-Moon-
dc.contributor.authorPark, Jung-Dong-
dc.date.accessioned2024-08-08T11:00:46Z-
dc.date.available2024-08-08T11:00:46Z-
dc.date.issued2023-04-
dc.identifier.issn2771-957X-
dc.identifier.issn2771-9588-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/21540-
dc.description.abstractWe report a 280-GHz mixer-first quadrature receiver in 130-nm SiGe that achieves a peak gain of 25 dB, an IF bandwidth of 30-GHz, and a minimum single-sideband (SSB) noise figure (NF) of 18.2 dB. The receiver is comprised of two Gilbert-cell mixers with swapped RF and local oscillation (LO) ports that downconvert the RF signal at 260-299 GHz to I/Q IF signals at 1-40 GHz by using a pseudo-differential LO driver at 259 GHz. In each channel, a wideband IF amplifier was used for an aimed conversion gain of higher than 20 dB. Combined with a differentia hybrid coupler, an integrated 259-GHz driving amplifier (DA) was integrated to generate the quadrature LO signals for I and Q channels. The measured amplitude and phase imbalance between the I and Q channels are around 4 dB and 4 degrees, respectively. The fabricated chip occupies a whole area of 1.12 mm(2) and consumes a dc power of 384 mW.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-
dc.titleA 260-300-GHz Mixer-First IQ Receiver With Fundamental LO Driver in 130-nm SiGe Process-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LMWT.2022.3228646-
dc.identifier.scopusid2-s2.0-85174871367-
dc.identifier.wosid000934647600001-
dc.identifier.bibliographicCitationIEEE Microwave and Wireless Technology Letters, v.33, no.4, pp 435 - 438-
dc.citation.titleIEEE Microwave and Wireless Technology Letters-
dc.citation.volume33-
dc.citation.number4-
dc.citation.startPage435-
dc.citation.endPage438-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusTRANSMITTER-
dc.subject.keywordPlusBICMOS-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordPlusPOWER-
dc.subject.keywordAuthorIQ receiver-
dc.subject.keywordAuthorSiGe-
dc.subject.keywordAuthorsub-terahertz (THz) amplifier-
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