Theoretical expolartion of site selective Perovskites for the application of electronic and optoresponsive memory devices

Abstract

Now a days, the advent of energy efficient artificial neuromorphic hardware is facing variability and uniformity related state of art issues. DFT deals with this plethora at the atomistic level by introducing innovative composites of improved neuromorphic performance. In this theoretical study unprecedented potential of non-toxic and high dielectric strength of BaHfO3 is investigated for storage devices. For improving the variability and uniformity related state of art issues, the influence of substitutional doping ofsingle rare earth metal cation at "A" (Ba atom) and "B" (Hf atom) sites of the studied cubic ABO3 supercell is explored in formation of conducting filaments (CFs). Formation of strongly confined CFs in BaHf1-xSmO3 will provide an intriguing roadmap for practical application by resolving the variability and uniformity issues in electronic and optoresponsive memory devices. Alterations of structural and electronic properties by single rare earth dopants will assist in understanding the filamentary based resistive switching in BaHfO3. Change in resistance state caused by incident photon stimuli based extrinsic trigger revealed the intriguing neuromorphic nature of BaHfO3. The findings of this study will enrich the research exploring the perovskite based resistive switching materials for low power consuming resistive random access memory devices in neuromorphic applications.