Cited 22 time in
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Chaeun | - |
| dc.contributor.author | Lee, Yunseok | - |
| dc.contributor.author | Kim, Sunghun | - |
| dc.contributor.author | Kang, Myounggon | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.date.accessioned | 2024-08-08T10:01:49Z | - |
| dc.date.available | 2024-08-08T10:01:49Z | - |
| dc.date.issued | 2023-04 | - |
| dc.identifier.issn | 1369-8001 | - |
| dc.identifier.issn | 1873-4081 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/21322 | - |
| dc.description.abstract | In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (-1 V) was determined by scanning the DC I-V curves of many cells. The DC endurance of-104 cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier Ltd | - |
| dc.title | Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.mssp.2023.107314 | - |
| dc.identifier.scopusid | 2-s2.0-85146051055 | - |
| dc.identifier.wosid | 000925289600001 | - |
| dc.identifier.bibliographicCitation | Materials Science in Semiconductor Processing, v.157, pp 1 - 6 | - |
| dc.citation.title | Materials Science in Semiconductor Processing | - |
| dc.citation.volume | 157 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | RESISTIVE SWITCHING PROPERTIES | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordPlus | POWER | - |
| dc.subject.keywordPlus | FILM | - |
| dc.subject.keywordAuthor | AI semiconductor | - |
| dc.subject.keywordAuthor | Neural network | - |
| dc.subject.keywordAuthor | Neuromorphic system | - |
| dc.subject.keywordAuthor | Memristor | - |
| dc.subject.keywordAuthor | Resistive switching | - |
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