Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodesopen access
- Authors
- Ardhi, Ryanda Enggar Anugrah; Liu, Guicheng; Park, Jihun; Lee, Joong Kee
- Issue Date
- Jan-2023
- Publisher
- ELSEVIER
- Keywords
- Schottky contact; Built-in voltage; Ion transport kinetics; Semiconducting passivation layer; Amorphous carbon film; Dendrite-free Zn-metal anode
- Citation
- Energy Storage Materials, v.54, pp 863 - 874
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- Energy Storage Materials
- Volume
- 54
- Start Page
- 863
- End Page
- 874
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/20964
- DOI
- 10.1016/j.ensm.2022.11.031
- ISSN
- 2405-8297
2405-8289
- Abstract
- Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low iondiffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (FSB) and built-in voltage (V-bi). CCF-M, Phi(SB), and V-bi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm(-2), respectively, with a capacity retention of similar to 83% after 5000 cycles at 1.0 A g(V21O5)(-1) in Zn vertical bar V2O5 full cell.
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Collections - College of Natural Science > Division of Physics & Semiconductor Science > 1. Journal Articles

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