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Comparative evaluation of ZnO nanorod material properties and UV photodetector performance with various transition metal dopings

Authors
Nam, KiyunLee, SeungminKim, Jae HyunHong, Gi YoungKim, Sam-Dong
Issue Date
Dec-2021
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.32, no.23, pp 27596 - 27606
Pages
11
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume
32
Number
23
Start Page
27596
End Page
27606
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/20902
DOI
10.1007/s10854-021-07134-4
ISSN
0957-4522
1573-482X
Abstract
In this study, we explore the structural, optical, and chemical properties of ZnO nanorods (NRs) grown through various transition metal (TM) dopings of Cu, Ni, Co, Ni-plus-Cu, and Ni-plus-Co, while investigating the effect of these external dopings on the performance of ZnO NR-based ultra-violet photodetectors (PDs) implemented on polyethylene terephthalate substrates. The TM dopings, especially Ni-plus-Cu or Ni-plus-Co co-doping, not only improve the crystalline quality but also significantly suppress the density of deep-level emission defects in as-grown ZnO NRs, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, increased O/Zn stoichiometry from 0.55 (undoped) to 0.78 and 0.83 is achieved when the NRs doped with Ni-plus-Cu and Ni-plus-Co, respectively, as revealed by X-ray photoelectron spectroscopy. The highest current on-off ratio of similar to 51 and spectral responsivity of similar to 136 A/W are obtained from the PDs fabricated with the NRs doped with Ni-plus-Co. The response time of the PDs is also improved with TM dopings, and rise time and fall time are reduced to similar to 1/5 and similar to 1/4, respectively, in the case of Ni-plus-Co doping compared to the values of the device fabricated with undoped NRs.
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