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Comparative evaluation of ZnO nanorod material properties and UV photodetector performance with various transition metal dopings

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dc.contributor.authorNam, Kiyun-
dc.contributor.authorLee, Seungmin-
dc.contributor.authorKim, Jae Hyun-
dc.contributor.authorHong, Gi Young-
dc.contributor.authorKim, Sam-Dong-
dc.date.accessioned2024-08-08T09:31:01Z-
dc.date.available2024-08-08T09:31:01Z-
dc.date.issued2021-12-
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/20902-
dc.description.abstractIn this study, we explore the structural, optical, and chemical properties of ZnO nanorods (NRs) grown through various transition metal (TM) dopings of Cu, Ni, Co, Ni-plus-Cu, and Ni-plus-Co, while investigating the effect of these external dopings on the performance of ZnO NR-based ultra-violet photodetectors (PDs) implemented on polyethylene terephthalate substrates. The TM dopings, especially Ni-plus-Cu or Ni-plus-Co co-doping, not only improve the crystalline quality but also significantly suppress the density of deep-level emission defects in as-grown ZnO NRs, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, increased O/Zn stoichiometry from 0.55 (undoped) to 0.78 and 0.83 is achieved when the NRs doped with Ni-plus-Cu and Ni-plus-Co, respectively, as revealed by X-ray photoelectron spectroscopy. The highest current on-off ratio of similar to 51 and spectral responsivity of similar to 136 A/W are obtained from the PDs fabricated with the NRs doped with Ni-plus-Co. The response time of the PDs is also improved with TM dopings, and rise time and fall time are reduced to similar to 1/5 and similar to 1/4, respectively, in the case of Ni-plus-Co doping compared to the values of the device fabricated with undoped NRs.-
dc.format.extent11-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleComparative evaluation of ZnO nanorod material properties and UV photodetector performance with various transition metal dopings-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1007/s10854-021-07134-4-
dc.identifier.scopusid2-s2.0-85116813247-
dc.identifier.wosid000706051100009-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.32, no.23, pp 27596 - 27606-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS-
dc.citation.volume32-
dc.citation.number23-
dc.citation.startPage27596-
dc.citation.endPage27606-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusCO-
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