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Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Heo, Jungang | - |
| dc.contributor.author | Cho, Youngboo | - |
| dc.contributor.author | Ji, Hyeonseung | - |
| dc.contributor.author | Kim, Min-Hwi | - |
| dc.contributor.author | Lee, Jong-Ho | - |
| dc.contributor.author | Lee, Jung-Kyu | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.date.accessioned | 2024-08-08T08:31:06Z | - |
| dc.date.available | 2024-08-08T08:31:06Z | - |
| dc.date.issued | 2023-11 | - |
| dc.identifier.issn | 2166-532X | - |
| dc.identifier.issn | 2166-532X | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/20505 | - |
| dc.description.abstract | In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of the ZrOX-based device enables power consumption reduction owing to a lower forming voltage and compliance current. Moreover, the on/off ratio of the Ti/ZrOX/HfAlOX/TiN device (>102) is higher than that of the Ti/ZrOX/TiN device (>10). We use the 1/f noise measurement technique to clarify the transport mechanism of the Ti/ZrOX/HfAlOX/TiN device; consequently, ohmic conduction and Schottky emission are confirmed in the low- and high-resistance states, respectively. In addition, the multilevel cell, potentiation, and depression characteristics of the Ti/ZrOX/HfOX/TiN device are considered to assess its suitability as a neuromorphic device. Accordingly, a modified National Institute of Standards and Technology database simulation is conducted using Python to test the pattern recognition accuracy. © 2023 Author(s). | - |
| dc.format.extent | 12 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AIP Publishing | - |
| dc.title | Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/5.0175587 | - |
| dc.identifier.scopusid | 2-s2.0-85175733475 | - |
| dc.identifier.wosid | 001096677500002 | - |
| dc.identifier.bibliographicCitation | APL Materials, v.11, no.11, pp 1 - 12 | - |
| dc.citation.title | APL Materials | - |
| dc.citation.volume | 11 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 12 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
| dc.subject.keywordPlus | RRAM | - |
| dc.subject.keywordPlus | CONDUCTION | - |
| dc.subject.keywordPlus | BEHAVIOR | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordAuthor | Pattern Recognition | - |
| dc.subject.keywordAuthor | Bi-layer Structure | - |
| dc.subject.keywordAuthor | Forming Voltages | - |
| dc.subject.keywordAuthor | Mechanism Analysis | - |
| dc.subject.keywordAuthor | Memristor | - |
| dc.subject.keywordAuthor | Neuromorphic Systems | - |
| dc.subject.keywordAuthor | Power Consumption Reduction | - |
| dc.subject.keywordAuthor | Resistive Switching | - |
| dc.subject.keywordAuthor | Switching Characteristics | - |
| dc.subject.keywordAuthor | Tin And Ti | - |
| dc.subject.keywordAuthor | Transport Mechanism | - |
| dc.subject.keywordAuthor | Computer Software | - |
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)