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Cited 5 time in webofscience Cited 10 time in scopus
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Single Power-Conversion Active-Clamped AC/DC Converter Employing Si/SiC Hybrid Switch

Authors
Bai, ChangkyuKim, Minsung
Issue Date
Feb-2024
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Number of devices; series-resonant con-verter; Si IGBT/SiC MOSFET hybrid switches; single power-conversion structure; switching modulation
Citation
IEEE Transactions on Industrial Electronics, v.71, no.2, pp 1616 - 1630
Pages
15
Indexed
SCIE
SCOPUS
Journal Title
IEEE Transactions on Industrial Electronics
Volume
71
Number
2
Start Page
1616
End Page
1630
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/19846
DOI
10.1109/TIE.2023.3262889
ISSN
0278-0046
1557-9948
Abstract
This article proposes a single power-conversion voltage-fed active-clamped ac/dc converter that uses an Si IGBT/SiC MOSFET hybrid switch. By incorporating two switches at the primary side of the circuit, we removed the full-bridge diode rectifier, and thereby reduced the required number of power devices. Inherent bidirectional active-clamp circuit naturally limits the voltage spike at bottom switches and reuses the energy accumulated in the leakage inductor during both positive and negative grid half cycles. Also, it offers dual-resonant power transfer paths, so it can deliver the high power with less circuit components. The alternating switching modulation makes one of the bottom switches turn-off with hard switching per grid half cycle while holding other bottom switch on to conduct the current. In contrast, top switches are softly switched with low root-mean-square current. Therefore, the converter with proposed switching modulation enables direct substitution of Si IGBT for an SiC MOSFET at the top on the primary side, and thereby which cuts down the circuit implementation cost. We built a 1-kW prototype converter and confirmed its validity.
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