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A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT
- Authors
- Tung The-Lam Nguyen; Kim, Sam-Dong
- Issue Date
- Nov-2017
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.137, pp 109 - 116
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 137
- Start Page
- 109
- End Page
- 116
- ISSN
- 0038-1101
1879-2405
- Abstract
- We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions. (C) 2017 Elsevier Ltd. All rights reserved.
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