Detailed Information
Cited 5 time in 
Cited 6 time in 
Cited 6 time in
Metadata Downloads
Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
- Issue Date
- Nov-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ZnO nanorod; Lithography; Nanoscale device; Planar device; Metal-semiconductor contact; Negative differential resistance
- Citation
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.74, pp 241 - 243
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Volume
- 74
- Start Page
- 241
- End Page
- 243
- ISSN
- 1386-9477
1873-1759
- Abstract
- We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorocl was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current-voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NOR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod. (C) 2015 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Hyun Chang
- College of Engineering (Department of Electronics and Electrical Engineering)