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Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting
- Authors
- Cho, Karam; Park, Jung-Dong; Shin, Changhwan
- Issue Date
- Jun-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Atomic layer deposition; TiO2; titanium isopropoxide; H2O
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.3, pp 346 - 351
- Pages
- 6
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 3
- Start Page
- 346
- End Page
- 351
- ISSN
- 1598-1657
2233-4866
- Abstract
- Titanium dioxide (TiO2) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H2O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO2 film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.
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Related Researcher
- Park, Jung Dong
- College of Engineering (Department of Electronics and Electrical Engineering)