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Multi-level switching mechanism of resistive memory device based on SiO2 nanoparticle-decorated TiOx
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2023-05-11T13:41:11Z | - |
| dc.date.available | 2023-05-11T13:41:11Z | - |
| dc.date.issued | 2020-11-05 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/12559 | - |
| dc.title | Multi-level switching mechanism of resistive memory device based on SiO2 nanoparticle-decorated TiOx | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferenceDate | 2020-11-04 ~ 2020-11-06 | - |
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)