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Quantitative analysis of defect states in amorphous of Ga doped InSnZnO films using photo-induced current transient spectroscopy

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dc.contributor.author정권범-
dc.date.accessioned2023-05-11T10:41:13Z-
dc.date.available2023-05-11T10:41:13Z-
dc.date.issued2022-02-16-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/11679-
dc.titleQuantitative analysis of defect states in amorphous of Ga doped InSnZnO films using photo-induced current transient spectroscopy-
dc.typeConference-
dc.citation.conferenceName한국진공학회-
dc.citation.conferencePlace대한민국-
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Chung, Kwun Bum
College of Natural Science (Department of Physics)
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