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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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3D Vertical Ferroelectric Capacitors with Excellent Scalability

Lim, Eunjin; Park, Yongjin; Youn, Chaewon; Kim, Sungjun

ArticleIssue Date2025CitationNano Letters, v.25, no.6, pp 2166 - 2172PublisherAmerican Chemical Society
SCIESCOPUS
Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristorsopen access

Shin, Jio; Youn, Chaewon; Kim, Sungjun

ArticleIssue Date2026CitationThe Journal of Chemical Physics, v.164, no.2PublisherAIP Publishing
SCIESCOPUS
Ferroelectric tunnel junctions with 5 nm-thick HZO for tunable synaptic plasticity and neuromorphic computingopen access

Shin, Jio; Seo, Euncho; Youn, Chaewon; Kim, Sungjun

ArticleIssue Date2025CitationJournal of Alloys and Compounds, v.1036, pp 1 - 10PublisherElsevier B.V.
SCIESCOPUS
Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing

Youn, Chaewon; Kim, Sungjun

ArticleIssue Date2025CitationScience China Information Sciences, v.68, no.10PublisherScience China Press
SCIESCOPUS
Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junctions

Lee, Jungwoo; Youn, Chaewon; Heo, Jungang; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.12, no.43, pp 17362 - 17376PublisherRoyal Society of Chemistry
SCIESCOPUS
Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications

Lee, Jung-Kyu; Park, Yongjin; Seo, Euncho; Park, Woohyun; Youn, Chaewon; Lee, Sejoon; Kim, Sungjun

ArticleIssue Date2025CitationACS APPLIED ELECTRONIC MATERIALS, v.7, no.7, pp 3055 - 3066PublisherAmerican Chemical Society
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