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SCIESCOPUSKCI
Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting

Cho, Karam; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.3, pp 346 - 351PublisherIEEK PUBLICATION CENTER
SCIESCOPUS
Experimental Observation of Negative Capacitance in Organic/Ferroelectric Capacitor for Steep Switching MOSFET

Lee, Youngtaek; Jo, Jaesung; Cho, Karam; Oh, Sangheon; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2017CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp 3469 - 3471PublisherAMER SCIENTIFIC PUBLISHERS
SCISCIESCOPUS
Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-kappa/Metal Gate Work-Function Variation

Nam, Hyohyun; Shin, Changhwan; Park, Jung-Dong

ArticleIssue Date2018CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.11, pp 4780 - 4785PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Jo, Jaesung; Choi, Woo Young; Park, Jung-Dong; Shim, Jae Won; Yu, Hyun-Yong; Shin, Changhwan

ArticleIssue Date2015CitationNANO LETTERS, v.15, no.7, pp 4553 - 4556PublisherAMER CHEMICAL SOC
SCISCIESCOPUS
Performance Booster for Vertical Tunnel Field-Effect Transistor: Field-Enhanced High-kappa Layer

Lee, Hyunjae; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp 1383 - 1386PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Precise control of nanoscale spacing between electrodes using different natured self-assembled monolayers

You, Young-Jun; Kim, Yongjin; Cheun, Hyeunseok; Shin, Changhwan; Kim, Do Young; Lee, Jae Hak; Song, Joon Yub; Lee, Jae Woo; Lee, Sae Youn; Ju, Byeong-Kwon, et al.

ArticleIssue Date2019CitationNANOTECHNOLOGY, v.30, no.26PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
Study of Random Variation in Germanium-Source Vertical Tunnel FET

Lee, Hyunjae; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp 1827 - 1834PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of Work-Function Variation for High-kappa/Metal-Gate Ge-Source Tunnel Field-Effect Transistors

Lee, Youngtaek; Nam, Hyohyun; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.7, pp 2143 - 2147PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of Work-Function Variation in High-kappa/Metal-Gate Gate-All-Around Nanowire MOSFET

Nam, Hyohyun; Lee, Youngtaek; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.8, pp 3338 - 3341PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Ultra-thick semi-crystalline photoactive donor polymer for efficient indoor organic photovoltaics

Shin, Sang-Chul; Koh, Chang Woo; Vincent, Premkumar; Goo, Ji Soo; Bae, Jin-Hyuk; Lee, Jae-Joon; Shin, Changhwan; Kim, Hyeok; Woo, Han Young; Shim, Jae Won

ArticleIssue Date2019CitationNANO ENERGY, v.58, pp 466 - 475PublisherELSEVIER
SCISCIESCOPUS
Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

Ko, Eunah; Lee, Hyunjae; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.12, pp 5030 - 5035PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUSKCI
Worst Case Sampling Method with Confidence Ellipse for Estimating the Impact of Random Variation on Static Random Access Memory (SRAM)

Oh, Sangheon; Jo, Jaesung; Lee, Hyunjae; Lee, Gyo Sub; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2015CitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.3, pp 374 - 380PublisherIEEK PUBLICATION CENTER
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