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Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

Hsu, Chih-Chieh; Wu, Wen-Chin; Xiao, Zheng-Kai; Jhang, Wun-Ciang; Qiu, Zi-Rong; Kim, Sungjun

ArticleIssue Date2025CitationPhysica B: Condensed Matter, v.697, pp 1 - 12PublisherELSEVIER
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