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Showing results 1 to 18 of 18

SCIESCOPUS
A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic Systemopen access

Kim, Min-Hwi; Lee, Sin-Hyung; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2022CitationIEEE Access, v.10, pp 37030 - 37038PublisherIEEE
SCIESCOPUS
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2021CitationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.23, no.48, pp 27234 - 27243PublisherROYAL SOC CHEMISTRY
SCIESCOPUS
Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiN (x) /TiN conductive bridging random access memory observed at sub-mu A current

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEMopen access

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Park, Byung-Gook; Choi, Woo Young

ArticleIssue Date2023CitationACS Applied Electronic Materials, v.5, no.3, pp 1834 - 1843PublisherAmerican Chemical Society
SCIESCOPUS
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application

Kim, Tae-Hyeon; Kim, Min-Hwi; Bang, Suhyun; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.19, pp 475 - 480PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Ryu, Ji-Ho; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Abbas, Yawar; Kim, Min-Hwi; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.529PublisherELSEVIER
SCIESCOPUS
HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM

Kim, Tae-Hyeon; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationMICROELECTRONIC ENGINEERING, v.237PublisherELSEVIER
SCIESCOPUS
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Hong, Kyungho; Kim, Sungjun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp 438 - 442PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulationopen access

Choi, Yeon-Joon; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Chae Soo; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 228720 - 228730PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM

Hong, Kyungho; Min, Kyung Kyu; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Choi, Yeon Joon; Kim, Chae Soo; Lee, Jae Yoon; Kim, Sungjun, et al.

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.4, pp 1600 - 1605PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrateopen access

Rahmani, Mehr Khalid; Kim, Min-Hwi; Hussain, Fayyaz; Abbas, Yawar; Ismail, Muhammad; Hong, Kyungho; Mahata, Chandreswar; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.5PublisherMDPI
SCIESCOPUS
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Applicationopen access

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationELECTRONICS, v.9, no.8, pp 1 - 8PublisherMDPI
SCIESCOPUS
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit

Ahn, Ji-Hoon; Choi, Hyun-Seok; Kim, Jung Nam; Park, Byung-Gook; Kim, Sungjun; Lee, Jaehong; Kim, Yoon

ArticleIssue Date2021CitationSOLID-STATE ELECTRONICS, v.186PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Mahata, Chandreswar; Lee, Changmin; An, Youngseo; Kim, Min-Hwi; Bang, Suhyun; Kim, Chae Soo; Ryu, Ji-Ho; Kim, Sungjun; Kim, Hyoungsub; Park, Byung-Gook

ArticleIssue Date2020CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.826PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun, et al.

ArticleIssue Date2020CitationACS APPLIED MATERIALS & INTERFACES, v.12, no.30, pp 33908 - 33916PublisherAMER CHEMICAL SOC
SCIESCOPUS
Synaptic Device With High Rectification Ratio Resistive Switching and Its Impact on Spiking Neural Network

Kim, Chae Soo; Kim, Taehyung; Min, Kyung Kyu; Kim, Yeonwoo; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp 1610 - 1615PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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