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Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memoryopen access

Ismail, Muhammad; Batool, Zahida; Mahmood, Khalid; Rana, Anwar Manzoor; Yang, Byung-Do; Kim, Sungjun

ArticleIssue Date2020CitationRESULTS IN PHYSICS, v.18PublisherELSEVIER
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