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Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applicationsopen access

Kim, Jihyung; Kim, Dahye; Min, Kyung Kyu; Kraatz, Matthias; Han, Taeyoung; Kim, Sungjun

ArticleIssue Date2023CitationAdvanced Intelligent Systems, v.5, no.8PublisherWiley-VCH GmbH
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