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Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applicationsopen access

Kim, Jihyung; Kim, Dahye; Min, Kyung Kyu; Kraatz, Matthias; Han, Taeyoung; Kim, Sungjun

ArticleIssue Date2023CitationAdvanced Intelligent Systems, v.5, no.8PublisherWiley-VCH GmbH
SCIESCOPUS
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic systemopen access

Park, Yongjin; Kim, Jihyung; Kim, Sunghun; Kim, Dahye; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Materials Chemistry C, v.11, no.40, pp 13886 - 13896PublisherRoyal Society of Chemistry
SCIESCOPUS
Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applicationsopen access

Kim, Dahye; Kim, Jihyung; Yun, Seokyeon; Lee, Jungwoo; Seo, Euncho; Kim, Sungjun

ArticleIssue Date2023CitationNanoscale, v.15, no.18, pp 8366 - 8376PublisherRoyal Society of Chemistry
SCIESCOPUS
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memoryopen access

Kim, Jihyung; Kwon, Osung; Lim, Eunjin; Kim, Dahye; Kim, Sungjun

ArticleIssue Date2023CitationPhysical Chemistry Chemical Physics, v.25, no.6, pp 4588 - 4597PublisherRoyal Society of Chemistry
SCIESCOPUS
Implementation of reservoir computing using volatile WOx-based memristoropen access

Kim, Dahye; Shin, Jiwoong; Kim, Sungjun

ArticleIssue Date2022CitationApplied Surface Science, v.599, pp 1 - 8PublisherELSEVIER
SCIESCOPUS
Logic-in-memory application of CMOS compatible silicon nitride memristor

Kim, Dahye; Kim, Sunghun; Kim, Sungjun

ArticleIssue Date2021CitationCHAOS SOLITONS & FRACTALS, v.153PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarizationopen access

Kim, Sunghun; Kim, Juri; Kim, Dahye; Kim, Jihyung; Kim, Sungjun

ArticleIssue Date2023CitationAPL Materials, v.11, no.10, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
Prospects and applications of volatile memristorsopen access

Kim, Dahye; Jeon, Beomki; Lee, Yunseok; Kim, Doohyung; Cho, Youngboo; Kim, Sungjun

ArticleIssue Date2022CitationApplied Physics Letters, v.121, no.1, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions

Lim, Eunjin; Kim, Dahye; Park, Jongmin; Koo, Minsuk; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Physics D: Applied Physics, v.57, no.47, pp 1 - 18PublisherIOP Publishing Ltd.
SCIESCOPUS
Resistive Switching Characteristics of ZnO-Based RRAM on Silicon Substrateopen access

Kim, Dahye; Shin, Jiwoong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.10PublisherMDPI
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