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Showing results 1 to 11 of 11

SCIESCOPUS
Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

Cho, Hyojong; Ryu, Ji-Ho; Mahata, Chandreswar; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Cho, Seongjae; Mikhaylov, Alexey; Lee, Jack C.; Kim, Sungjun

ArticleIssue Date2020CitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.43PublisherIOP PUBLISHING LTD
SCIESCOPUS
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

Ismail, Muhammad; Abbas, Haider; Choi, Changhwan; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.529PublisherELSEVIER
SCIESCOPUS
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic applicationopen access

Rahmani, Mehr Khalid; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun

ArticleIssue Date2020CitationRESULTS IN PHYSICS, v.18PublisherELSEVIER
SCIESCOPUS
Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications

Ismail, Muhammad; Hashmi, Arqum; Rana, Anwar Manzoor; Kim, Sungjun

ArticleIssue Date2020CitationNANOTECHNOLOGY, v.31, no.32PublisherIOP PUBLISHING LTD
SCIESCOPUS
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Ryu, Ji-Ho; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Abbas, Yawar; Kim, Min-Hwi; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.529PublisherELSEVIER
SCIESCOPUS
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrateopen access

Rahmani, Mehr Khalid; Kim, Min-Hwi; Hussain, Fayyaz; Abbas, Yawar; Ismail, Muhammad; Hong, Kyungho; Mahata, Chandreswar; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.5PublisherMDPI
SCIESCOPUS
Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity

Ismail, Muhammad; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.530PublisherELSEVIER
SCIESCOPUS
Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memoryopen access

Ismail, Muhammad; Batool, Zahida; Mahmood, Khalid; Rana, Anwar Manzoor; Yang, Byung-Do; Kim, Sungjun

ArticleIssue Date2020CitationRESULTS IN PHYSICS, v.18PublisherELSEVIER
SCIESCOPUS
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer

Ismail, Muhammad; Abbas, Haider; Choi, Changhwan; Kim, Sungjun

ArticleIssue Date2020CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.835PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun, et al.

ArticleIssue Date2020CitationACS APPLIED MATERIALS & INTERFACES, v.12, no.30, pp 33908 - 33916PublisherAMER CHEMICAL SOC
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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