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Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Wang, Kang L.; Hiramoto, Toshiro

ArticleIssue Date2013CitationAPPLIED PHYSICS LETTERS, v.102, no.8PublisherAMER INST PHYSICS
SCISCIESCOPUS
Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro

ArticleIssue Date2013CitationAPPLIED PHYSICS LETTERS, v.103, no.10PublisherAMER INST PHYSICS
SCISCIESCOPUS
Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

Lee, Youngmin; Lee, Sejoon; Im, Hyunsik; Hiramoto, Toshiro

ArticleIssue Date2015CitationJOURNAL OF APPLIED PHYSICS, v.117, no.6PublisherAMER INST PHYSICS
SCISCIESCOPUS
Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro

ArticleIssue Date2014CitationNANO LETTERS, v.14, no.1, pp 71 - 77PublisherAMER CHEMICAL SOC
SCIESCOPUS
Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature

Lee, Youngmin; Lee, Jin Woo; Lee, Sejoon; Hiramoto, Toshiro; Wang, Kang L.

ArticleIssue Date2021CitationACS NANO, v.15, no.11, pp 18483 - 18493PublisherAMER CHEMICAL SOC
SCISCIESCOPUS
The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers

Lee, Sejoon; Lee, Youngmin; Song, Emil B.; Hiramoto, Toshiro

ArticleIssue Date2013CitationJOURNAL OF APPLIED PHYSICS, v.114, no.16PublisherAMER INST PHYSICS
SCISCIESCOPUSKCI
Transport behaviors and mechanisms in cuspidal blockade region for silicon single-hole transistor

Lee, Youngmin; Lee, Sejoon; Hiramoto, Toshiro

ArticleIssue Date2014CitationCURRENT APPLIED PHYSICS, v.14, no.3, pp 428 - 432PublisherELSEVIER SCIENCE BV
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