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A New Green Phosphor of Semiconductive Nanoporous ZnMnO:P

이세준

ConferenceIssue Date2017Place미국; UCLA
Annealing Behaviors for High-k ZrO2 Grown on Ge

이세준

ConferenceIssue Date2016Place미국; Hapuna Beach Prince Hotel
Correlation between photoluminescence properties and electrochemical structures for Cr-doped ZnO thin films

이세준

ConferenceIssue Date2008Place프랑스; Congress Center
Cr이 첨가된 ZnO 박막에서 엑시톤-포논 상호작용에 관한 고찰

이세준

ConferenceIssue Date2008Place대한민국; 김대중 켄벤션센터
Dependence of Magnetic Properties on Ti Contents in ZnCrTiO Thin-Films

이세준

ConferenceIssue Date2016Place대한민국; 라마다프린스호텔
Effects of Thermal Annealing on Electrostatic Capacitance Properties for High-k ZrO2 Layers Grown on Ge

이세준

ConferenceIssue Date2017Place대한민국; UCLA
Electrical properties of ZnCoO films grown by pulsed laser deposition method

이세준

ConferenceIssue Date2008Place미국; Hilton Hawaiian Village Hotel
Electrical tunneling transport properties of back-gated spin-tunneling metal-oxide-semiconductor diodes fabricated using ZnMnO:N nanocrystals

이세준

ConferenceIssue Date2008Place프랑스; Congress Center
Fabrication and characterization of Mn-doped ZnO nanocrystals into a SiO2 layer for the application of spin-tunneling devices

이세준

ConferenceIssue Date2008Place대한민국; 김대중 켄벤션센터
Fabrication and characterization of Mn-doped ZnO nanocrystals into a SiO2 layer for the application of spin-tunneling devices

이세준

ConferenceIssue Date2008Place미국; Hilton Hawaiian Village Hotel
Flexible and Transparent Memory: Non-Volatile Memory Based on Graphene Channel Transistor for Flexible and Transparent Electronics Applications

이세준

ConferenceIssue Date2012Place이탈리아
Graphene-Based Embedded-Oxide-Trap Memory (gEOTM) for Flexible Electronics Application

이세준

ConferenceIssue Date2012Place프랑스
Growth and characterization of ZrO2 grown on Ge

이세준

ConferenceIssue Date2016Place대한민국; BEXCO
Impact of electrical carrier conductivity on ferromagnetic properties for As-doped p-type (Zn0.93Mn0.07)O layers

이세준

ConferenceIssue Date2008Place미국; Hilton Hawaiian Village Hotel
Impact of electrical carrier conductivity on ferromagnetic properties for As-doped p-type (Zn0.93Mn0.07)O layers

이세준

ConferenceIssue Date2008Place대한민국; 김대중 켄벤션센터
Influence of oxygen-related defects on ferromagnetic properties for ZnMnO thin films

이세준

ConferenceIssue Date2010Place프랑스; Congress Center
Investigation on structural, optical, and magnetic properties for undoped and Mg-doped GaN layers implanted with Mn+ (5 and 10 at.%)

이세준

ConferenceIssue Date2008Place미국; Hilton Hawaiian Village Hotel
Observation of Negative-Differential Resistance Behaviors in Gated p+-i-n+ Silicon Transistors

이세준

ConferenceIssue Date2016Place대한민국; 라마다프린스호텔
Origin of one-side long extension of Coulomb blockade regime for single electron/hole transistors consisting of an ultra narrow Si nanowire-channel

이세준

ConferenceIssue Date2008Place대한민국; 김대중 켄벤션센터
Relevant correlation between oxygen-related residual defects and ferromagnetic properties for As-doped p-ZnMnO thin films

이세준

ConferenceIssue Date2010Place대한민국; 코엑스
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