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자료 필터
자료유형
발행연도
2021 ~ 2026
2021 2026
키워드
언어
전체 62건 중 41번부터 50번까지의 결과를 표시합니다.
2022
Article
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
- Mahata, Chandreswar ;
- Ismail, Muhammad ;
- Kang, Myounggon ;
- Kim, Sungjun
- 2022-06
- Nanoscale Research Letters
- Springer Science+Business Media
Article
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
- Ismail, Muhammad ;
- Mahata, Chandreswar ;
- Kang, Myounggon ;
- Kim, Sungjun
- 2022-06
- Nanoscale Research Letters
- Springer Science+Business Media
Article
Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage
- Ismail, Muhammad ;
- Abbas, Haider ;
- Mahata, Chandreswar ;
- Choi, Changhwan ;
- Kim, Sungjun
- 2022-04
- Journal of Materials Science & Technology
- Elsevier Ltd
Article
Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
- 2022-04
- Applied Surface Science
- ELSEVIER
Article
Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study
- Khera, Ejaz Ahmad ;
- Mahata, Chandreswar ;
- Imran, Muhammad ;
- Niaz, Niaz Ahmad ;
- Hussain, Fayyaz ;
- ... SungjunKim ;
- 외 2명
- 2022-04
- RSC Advances
- Royal Society of Chemistry
Article
Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect
- Yun, Seokyeon ;
- Mahata, Chandreswar ;
- Kim, Min-Hwi ;
- Kim, Sungjun
- 2022-03
- Applied Surface Science
- Elsevier BV
Article
Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence
- Ismail, Muhammad ;
- Mahata, Chandreswar ;
- Kwon, Osung ;
- Kim, Sungjun
- 2022-03
- ACS Applied Electronic Materials
- American Chemical Society
Article
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
- 2022-02
- Journal of Alloys and Compounds
- Elsevier B.V.
Article
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
- Ismail, Muhammad ;
- Chand, Umesh ;
- Mahata, Chandreswar ;
- Nebhen, Jamel ;
- Kim, Sungjun
- 2022-01
- Journal of Materials Science & Technology
- Elsevier Ltd.
2021
Article
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles
- Mahata, Chandreswar ;
- Algadi, Hassan ;
- Ismail, Muhammad ;
- Kwon, Daewoong ;
- Kim, Sungjun
- 2021-12-30
- Journal of Materials Science & Technology
- JOURNAL MATER SCI TECHNOL