이영민 프로필 사진

이영민

Lee, Young Min

대학

첨단융합대학

시스템반도체학부

ORCID

자료 필터

자료유형

발행연도

2013 ~ 2026
2013 2026

키워드

언어

전체 61건 중 51번부터 60번까지의 결과를 표시합니다.

2015
Article

Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

  • Lee, Youngmin ; 
  • Lee, Sejoon ; 
  • Im, Hyunsik ; 
  • Hiramoto, Toshiro
  • 2015-02
  • Journal of Applied Physics
  • AMER INST PHYSICS
Article

Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode

  • Lee, Byoungho ; 
  • Kim, Changmin ; 
  • Lee, Youngmin ; 
  • Lee, Sejoon ; 
  • Kim, Deuk Young
  • 2015-01
  • Current Applied Physics
  • ELSEVIER SCIENCE BV
2014
Article

Transport behaviors and mechanisms in cuspidal blockade region for silicon single-hole transistor

  • 2014-03
  • Current Applied Physics
  • ELSEVIER SCIENCE BV
Article

Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature

  • Lee, Sejoon ; 
  • Lee, Youngmin ; 
  • Song, Emil B. ; 
  • Hiramoto, Toshiro
  • 2014-01
  • Nano Letters
  • AMER CHEMICAL SOC
2013
Article

The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers

  • 2013-10-28
  • Journal of Applied Physics
  • AMER INST PHYSICS
Article

Modulation of peak-to-valley current ratio of Coulomb blockade oscillations in Si single hole transistors

  • 2013-09-02
  • Applied Physics Letters
  • AMER INST PHYSICS
Article

Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

  • 2013-08
  • Journal of Applied Physics
  • AMER INST PHYSICS
Article

Back-gate tuning of Schottky barrier height in graphene/zinc-oxide photodiodes

  • 2013-06
  • Applied Physics Letters
  • AMER INST PHYSICS
Article

Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

  • 2013-02-25
  • Applied Physics Letters
  • AMER INST PHYSICS
Article

Residual strain effects on the luminescence properties of self-organized GaN vertical nanorods grown by using HVPE

  • 2013-02
  • Journal of the Korean Physical Society
  • KOREAN PHYSICAL SOC