수치해석 기법을 활용한 MOSFET Cu-Clip 패키지 설계 최적화

초록

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) power modules have become integral in various electronic applications owing to their notable performance attributes, such as high-power density and rapid switching speeds. The effective thermal management of these modules over extended periods is critical for their long-term reliability because excessive heat can lead to device degradation and system failures. Traditionally, MOSFET power modules have been packaged using wire bonding techniques, connecting semiconductor devices to package leads with fine wire bonds. However, with the increasing demand for higher power densities and superior thermal performance, alternative packaging methods, such as copper clip bonding, have garnered attention. Copper clip bonding offers benefits such as reduced electrical and thermal resistance, enhanced heat dissipation, and improved reliability. This study focused on optimizing the size of the copper clip bonding and assessing its thermal reliability compared to wire bonding technology using finite element simulations with Ansys software. The Taguchi method was used in the experimental design to investigate the effects of varying the width of copper clips and the dimensions of the MOSFET die on thermal dissipation characteristics. Through this study, we gained valuable insights into how the thermal performance and reliability of MOSFET power modules can be improved under various applications.

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