Dual-phosphonic-acid-anchored self-assembled monolayers enhance bottom-electrode interfaces in perovskite memristors

초록

Organic–inorganic hybrid perovskite (OIHP)-based memristors have garnered significant attention for next-generation nonvolatile memory. However, their performance remains limited by interfacial defects, uncontrolled filament formation, and unstable switching behavior. In this study, we investigated the integration of a self-assembled monolayer (SAM) which has been spotlighted as an effective interlayer in OIHP-based electronics to improve charge transport, energy-level alignment, and device stability. The dipole induced upon SAM deposition facilitates favorable energy level alignment and suppresses interfacial charge trapping, thereby enabling controlled filament formation and stabilizing resistive switching. As a result, memristor devices incorporating the SAM-modified electrode exhibit a lower reset voltage, a significantly enhanced ON/OFF ratio, and superior cycling endurance and data retention compared to those with unmodified electrodes. This study demonstrates the potential of SAM-modified electrodes to improve the performances of OIHP-based memristors, offering a promising pathway for future non-volatile memory technologies. © 2026 Elsevier B.V.

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